Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics

• Published in: Nano research 2017-07, Vol.10 (7), p.2459-2470
• Main Authors: Jang, Byung Chul, Yang, Sang Yoon, Seong, Hyejeong, Kim, Sung Kyu, Choi, Junhwan, Im, Sung Gap, Choi, Sung-Yool
• Format: Article
• Language: English
• Subjects: Atomic/Molecular Structure and Spectra; Batteries; Biomedicine; Biotechnology; Chemistry and Materials Science; Circuits; Computation; Computer memory; Condensed Matter Physics; Electronic systems; Field programmable gate arrays; Flexible components; Gates; Gates (circuits); Logic circuits; Materials Science; Memristors; Nanotechnology; Power consumption; Product development; Research Article; Substrates; 柔性基板; 电子存储器; 电子系统; 电池供电; 运行周期; 逻辑电路; 静态功耗; 非易失性
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-017-1449-y

Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly（1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane） （pV3D3）-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic （MAGIC） architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems.