Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of m...

Full description

Saved in:
Bibliographic Details
Published in:Nano research 2017-02, Vol.10 (2), p.672-682
Main Authors: Berg, Alexander, Caroff, Philippe, Shahid, Naeem, Lockrey, Mark N., Yuan, Xiaoming, Borgström, Magnus T., Tan, Hark Hoe, Jagadish, Chennupati
Format: Article
Language:English
Subjects:
Cathodoluminescence
Crystal defects
Crystal structure
Electron microscopy
Energy transmission
Epitaxial growth
Epitaxy
Metalorganic chemical vapor deposition
Nanotechnology
Nanowires
Optical properties
Photovoltaic cells
Reproducibility
Spectroscopy
Synthesis
Transmission electron microscopy
Vapor phase epitaxy
Wavelengths
Wurtzite
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-016-1325-1