Achieving high MgO content in wurtzite ZnO epilayer grown on ScAlMgO^sub 4^ substrate

A series of wurtzite ZnO and Zn1-xMgxO (x=0.41-0.66) epilayers have been grown on ScAlMgO4 (SCAM) (0001) substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO conte...

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Bibliographic Details
Published in:Journal of crystal growth 2017-11, Vol.477, p.174
Main Authors: Wen, MC, Yan, T, Chang, L, Chou, MMC, Ye, N, Ploog, KH
Format: Article
Language:English
Subjects:
Band gap
Epitaxial growth
Magnesium oxide
Molecular beam epitaxy
Semiconductors
Substrates
Wurtzite
Zinc oxide
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Summary:A series of wurtzite ZnO and Zn1-xMgxO (x=0.41-0.66) epilayers have been grown on ScAlMgO4 (SCAM) (0001) substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO content of 66%. The epilayers with 41% and 50% MgO exhibit reasonable full width at half maximum (FWHM) values of 1200-1800" for the rocking curve of the (0002)wz reflection. However, both the surface morphology and the FWHM value deteriorate with further addition the MgO content to 66%.
ISSN:0022-0248
1873-5002