CdTe/Zn(Mg)(Se)Te quantum dots for single photon emitters grown by MBE

We report on pseudomorphic MBE growth of CdTe/Zn(Mg)(Se)Te quantum dot (QD) structures on InAs(100) substrates and studies of their structural and optical properties. The QDs were fabricated by using a thermal activation technique comprising deposition of a strained CdTe 2D layer, covering it with a...

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Bibliographic Details
Published in:Journal of crystal growth 2017-11, Vol.477, p.127-130
Main Authors: Sorokin, S.V., Sedova, I.V., Gronin, S.V., Klimko, G.V., Belyaev, K.G., Rakhlin, M.V., Mukhin, I.S., Toropov, A.A., Ivanov, S.V.
Format: Article
Language:English
Subjects:
A1. Structural and optical properties
A1. X-ray diffraction
A3. Molecular beam epitaxy
A3. Superlattices
Atoms & subatomic particles
B2. Semiconducting II–VI materials
Cadmium tellurides
Desorption
Emitters
Emitters (electron)
Indium arsenides
Lattice matching
Magnesium
Optical properties
Photoluminescence
Quantum dots
Substrates
Superlattices
Tellurium
Zinc tellurides
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Summary:We report on pseudomorphic MBE growth of CdTe/Zn(Mg)(Se)Te quantum dot (QD) structures on InAs(100) substrates and studies of their structural and optical properties. The QDs were fabricated by using a thermal activation technique comprising deposition of a strained CdTe 2D layer, covering it with amorphous Te, followed by fast thermal desorption of the Te layer, which results in a 2D-3D RHEED pattern transition. The QDs exhibit the surface density as low as ~1010cm−2. The influence of MBE growth parameters and the structure design on photoluminescence properties of the QDs are discussed. Single QD photoluminescence was observed at T=8K from the 200-nm-wide mesa-structures made of the CdTe QD structures, and the antibunching effect with g(2)(0)=0.16±0.04 was demonstrated. The peculiarities of MBE growth of ZnTe/MgTe/MgSe short-period superlattices nearly lattice-matched to InAs, which could serve as wide gap barriers for efficient electron and hole confinement in the CdTe/Zn(Mg)(Se)Te QDs, are also described. •CdTe/Zn(Mg)(Se)Te QD structures lattice-matched to InAs were grown by MBE.•CdTe/ZnTe QDs formed by thermal activation technique demonstrate antibunching effect.•MBE growth of ZnTe/MgTe/MgSe short-period superlattices pseudomorphic to InAs is reported.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.12.018