A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents

• Published in: Sensors and actuators. A. Physical. 2018-01, Vol.269, p.171-174
• Main Authors: Rao, Sandro, Pangallo, Giovanni, Di Benedetto, Luigi, Rubino, Alfredo, Licciardo, Gian Domenico, Della Corte, Francesco G.
• Format: Article
• Language: English
• Subjects: Bias; Diodes; Polytypes; Reproducibility; Schottky diodes; Sensitivity analysis; Sensor system and applications; Sensors; Silicon carbide; Silicon compounds; Temperature; Temperature dependence; Temperature sensors; Vanadium pentoxide
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2017.11.026

•A PTAT sensor based on V2O5/4H-SiC Schottky diodes is presented.•The linear dependence on T of the voltage has been studied from T=147K to 400K.•The characterized sensor shows high sensitivity, good reproducibility and a stable linear output.•The PTAT sensor shows a small sensitivity of the output to bias currents variations. A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T=147K to 400K which extends down the state-of-the art of more than 80K. The proposed sensor shows a sensitivity of 307μV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.