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Effect of annealing temperature on the phase transition, band gap and thermoelectric properties of Cu2SnSe3

The effect of annealing temperature on the phase transition of Cu2SnSe3 was investigated in order to study the thermoelectric (TE) properties of the various Cu2SnSe3 phases. The stoichiometric composition of Cu2SnSe3 was synthesized by melt solidification and annealing at various temperatures follow...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (7), p.1780-1788
Main Authors: Siyar, Muhammad, Jun-Young, Cho, Youn, Yong, Han, Seungwu, Kim, Miyoung, Sung-Hwan Bae, Park, Chan
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container_title Journal of materials chemistry. C, Materials for optical and electronic devices
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creator Siyar, Muhammad
Jun-Young, Cho
Youn, Yong
Han, Seungwu
Kim, Miyoung
Sung-Hwan Bae
Park, Chan
description The effect of annealing temperature on the phase transition of Cu2SnSe3 was investigated in order to study the thermoelectric (TE) properties of the various Cu2SnSe3 phases. The stoichiometric composition of Cu2SnSe3 was synthesized by melt solidification and annealing at various temperatures followed by water quenching. Rietveld refinement was used to calculate the amount of monoclinic and cubic phases for each sample. XRD analyses reveal that the samples annealed at 720 and 820 K have mostly a monoclinic phase along with a small amount of cubic phase. The Cu2SnSe3 annealed at 960 K was mostly cubic. TE properties of the cubic phase Cu2SnSe3 were studied for the first time, and it was found that it has much higher ZT (∼0.09) than the monoclinic phase at 600 K. Better TE performance of the cubic phase can be attributed to the smaller band gap (∼0.92 eV) compared to that of monoclinic Cu2SnSe3 (∼1.0 eV) at room temperature. First principles calculations further confirmed the conductive metallic nature of the cubic phase Cu2SnSe3. The power factor (S2σ) of the cubic phase, 0.24 mW m−1 K−2, was higher than that of the monoclinic phase, 0.096 mW m−1 K−2, at 600 K, but the difference between the thermal conductivities of the two phases was very small. Small polymorphic modification with increasing annealing temperature results in compositionally similar but different crystallographic phases, which is one of the possible reasons for the very similar thermal conductivities of the two phases. The electrical conductivity of the cubic phase, which is larger than that of the monoclinic phase, and the similar thermal conductivities of the two phases lead to the higher ZT of the cubic Cu2SnSe3.
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The power factor (S2σ) of the cubic phase, 0.24 mW m−1 K−2, was higher than that of the monoclinic phase, 0.096 mW m−1 K−2, at 600 K, but the difference between the thermal conductivities of the two phases was very small. Small polymorphic modification with increasing annealing temperature results in compositionally similar but different crystallographic phases, which is one of the possible reasons for the very similar thermal conductivities of the two phases. 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C, Materials for optical and electronic devices</title><description>The effect of annealing temperature on the phase transition of Cu2SnSe3 was investigated in order to study the thermoelectric (TE) properties of the various Cu2SnSe3 phases. The stoichiometric composition of Cu2SnSe3 was synthesized by melt solidification and annealing at various temperatures followed by water quenching. Rietveld refinement was used to calculate the amount of monoclinic and cubic phases for each sample. XRD analyses reveal that the samples annealed at 720 and 820 K have mostly a monoclinic phase along with a small amount of cubic phase. The Cu2SnSe3 annealed at 960 K was mostly cubic. TE properties of the cubic phase Cu2SnSe3 were studied for the first time, and it was found that it has much higher ZT (∼0.09) than the monoclinic phase at 600 K. Better TE performance of the cubic phase can be attributed to the smaller band gap (∼0.92 eV) compared to that of monoclinic Cu2SnSe3 (∼1.0 eV) at room temperature. First principles calculations further confirmed the conductive metallic nature of the cubic phase Cu2SnSe3. The power factor (S2σ) of the cubic phase, 0.24 mW m−1 K−2, was higher than that of the monoclinic phase, 0.096 mW m−1 K−2, at 600 K, but the difference between the thermal conductivities of the two phases was very small. Small polymorphic modification with increasing annealing temperature results in compositionally similar but different crystallographic phases, which is one of the possible reasons for the very similar thermal conductivities of the two phases. 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The power factor (S2σ) of the cubic phase, 0.24 mW m−1 K−2, was higher than that of the monoclinic phase, 0.096 mW m−1 K−2, at 600 K, but the difference between the thermal conductivities of the two phases was very small. Small polymorphic modification with increasing annealing temperature results in compositionally similar but different crystallographic phases, which is one of the possible reasons for the very similar thermal conductivities of the two phases. The electrical conductivity of the cubic phase, which is larger than that of the monoclinic phase, and the similar thermal conductivities of the two phases lead to the higher ZT of the cubic Cu2SnSe3.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c7tc05180h</doi><tpages>9</tpages></addata></record>
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source Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list)
subjects Annealing
Crystallography
Diffraction
Electrical resistivity
First principles
Mathematical analysis
Phase transitions
Phases
Power factor
Properties (attributes)
Water quenching
title Effect of annealing temperature on the phase transition, band gap and thermoelectric properties of Cu2SnSe3
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