Emerging perovskite materials for high density data storage and artificial synapses

Since the discovery of perovskite materials with the general chemical formula ABX 3 in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, p...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (7), p.16-1617
Main Authors: Wang, Yan, Lv, Ziyu, Zhou, Li, Chen, Xiaoli, Chen, Jinrui, Zhou, Ye, Roy, V. A. L, Han, Su-Ting
Format: Article
Language:English
Subjects:
Crystal structure
Data storage
Dielectric properties
Electronic devices
Ferroelectric materials
Ferroelectricity
Perovskites
Piezoelectricity
Switching
Synapses
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Summary:Since the discovery of perovskite materials with the general chemical formula ABX 3 in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, properties. Perovskite materials have high potential for developing nonvolatile high-density data storage devices. In this review, we summarized the current development of the application of perovskites in nonvolatile memories with an emphasis on the resistive switching properties. The unique advances of perovskite materials are introduced, followed by an assortment of the characterisations of their compositions and crystal structures. The insight into perovskite materials in artificial synapses has also concluded with predictable opportunities and challenges in this promising field. This review summarizes the recent progress in the development of perovskite materials for non-volatile memories and artificial synapses.
ISSN:2050-7526
2050-7534
DOI:10.1039/c7tc05326f