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Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique
The Kyropoulos technique allows growing large diameter Ti-doped sapphire for chirped pulse amplification (CPA) lasers. A scattering defect particular to Kyropoulos grown crystals is presented. This defect is characterized by different techniques: luminescence, absorption measurement, X-ray rocking c...
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Published in: | CrystEngComm 2018, Vol.2 (4), p.412-419 |
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container_title | CrystEngComm |
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creator | Alombert-Goget, Guillaume Guyot, Yannick Nehari, Abdeldjelil Benamara, Omar Blanchard, Nicholas Brenier, Alain Barthalay, Nicolas Lebbou, Kheirreddine |
description | The Kyropoulos technique allows growing large diameter Ti-doped sapphire for chirped pulse amplification (CPA) lasers. A scattering defect particular to Kyropoulos grown crystals is presented. This defect is characterized by different techniques: luminescence, absorption measurement, X-ray rocking curve, and transmission electron microscopy measurements. The impact of this defect on the potential application in CPA lasers is evaluated. The nature of this defect is discussed. Modified convexity of the interface is proposed to avoid the formation of this defect and increase the quality of the Ti-doped sapphire crystals.
The convex interface shape in Kyropoulos-grown crystals is suggested to be responsible for the scattering defect in large diameter titanium sapphire. |
doi_str_mv | 10.1039/c7ce02004j |
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The convex interface shape in Kyropoulos-grown crystals is suggested to be responsible for the scattering defect in large diameter titanium sapphire.</description><subject>Convexity</subject><subject>Crystal growth</subject><subject>Defects</subject><subject>Electron microscopy</subject><subject>Engineering Sciences</subject><subject>Lasers</subject><subject>Materials</subject><subject>Sapphire</subject><subject>Scattering</subject><subject>Titanium</subject><issn>1466-8033</issn><issn>1466-8033</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpNkc1LxDAQxYsouK5evAsBTwrVSdNu0-NSVldd8KCeS5qPbZZuU5NU6X9va0U9zTDz4_HmTRCcY7jBQLJbnnIJEUC8OwhmOF4sQgqEHP7rj4MT53YAOMYYZoF64cx7aXWzRUIqyT3SDaqZ3UokNNvLYYe89qzR3T4UppUCOda2lbYScds7z2qHttZ8Nqjska8keuqtaU1XG4e85FWj3zt5GhypAZRnP3UevN2tXvN1uHm-f8iXm5CTBPswoQIwFaIUpSopISwuE8CScAo0oyyOE4WJWqgoSlkGSZzCeEgpcKYYYRKTeXA16VasLlqr98z2hWG6WC83xTiDiFCIKP4Y2cuJba0ZLDpf7Exnm8FeEQEGSqIoG6nrieLWOGel-pXFUIyZF3mar74zfxzgiwm2jv9yfz8hX_E3feA</recordid><startdate>2018</startdate><enddate>2018</enddate><creator>Alombert-Goget, Guillaume</creator><creator>Guyot, Yannick</creator><creator>Nehari, Abdeldjelil</creator><creator>Benamara, Omar</creator><creator>Blanchard, Nicholas</creator><creator>Brenier, Alain</creator><creator>Barthalay, Nicolas</creator><creator>Lebbou, Kheirreddine</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0001-8120-2306</orcidid><orcidid>https://orcid.org/0000-0002-4048-8165</orcidid><orcidid>https://orcid.org/0000-0002-4924-2161</orcidid><orcidid>https://orcid.org/0000-0002-3283-6043</orcidid><orcidid>https://orcid.org/0000-0001-7802-8167</orcidid><orcidid>https://orcid.org/0000-0001-8369-0251</orcidid></search><sort><creationdate>2018</creationdate><title>Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique</title><author>Alombert-Goget, Guillaume ; Guyot, Yannick ; Nehari, Abdeldjelil ; Benamara, Omar ; Blanchard, Nicholas ; Brenier, Alain ; Barthalay, Nicolas ; Lebbou, Kheirreddine</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-58d018ddbdbfb833a4b501e3c80898a445f13f6f227a9054700014bd19fa3ae13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Convexity</topic><topic>Crystal growth</topic><topic>Defects</topic><topic>Electron microscopy</topic><topic>Engineering Sciences</topic><topic>Lasers</topic><topic>Materials</topic><topic>Sapphire</topic><topic>Scattering</topic><topic>Titanium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alombert-Goget, Guillaume</creatorcontrib><creatorcontrib>Guyot, Yannick</creatorcontrib><creatorcontrib>Nehari, Abdeldjelil</creatorcontrib><creatorcontrib>Benamara, Omar</creatorcontrib><creatorcontrib>Blanchard, Nicholas</creatorcontrib><creatorcontrib>Brenier, Alain</creatorcontrib><creatorcontrib>Barthalay, Nicolas</creatorcontrib><creatorcontrib>Lebbou, Kheirreddine</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>CrystEngComm</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alombert-Goget, Guillaume</au><au>Guyot, Yannick</au><au>Nehari, Abdeldjelil</au><au>Benamara, Omar</au><au>Blanchard, Nicholas</au><au>Brenier, Alain</au><au>Barthalay, Nicolas</au><au>Lebbou, Kheirreddine</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique</atitle><jtitle>CrystEngComm</jtitle><date>2018</date><risdate>2018</risdate><volume>2</volume><issue>4</issue><spage>412</spage><epage>419</epage><pages>412-419</pages><issn>1466-8033</issn><eissn>1466-8033</eissn><abstract>The Kyropoulos technique allows growing large diameter Ti-doped sapphire for chirped pulse amplification (CPA) lasers. A scattering defect particular to Kyropoulos grown crystals is presented. This defect is characterized by different techniques: luminescence, absorption measurement, X-ray rocking curve, and transmission electron microscopy measurements. The impact of this defect on the potential application in CPA lasers is evaluated. The nature of this defect is discussed. Modified convexity of the interface is proposed to avoid the formation of this defect and increase the quality of the Ti-doped sapphire crystals.
The convex interface shape in Kyropoulos-grown crystals is suggested to be responsible for the scattering defect in large diameter titanium sapphire.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c7ce02004j</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-8120-2306</orcidid><orcidid>https://orcid.org/0000-0002-4048-8165</orcidid><orcidid>https://orcid.org/0000-0002-4924-2161</orcidid><orcidid>https://orcid.org/0000-0002-3283-6043</orcidid><orcidid>https://orcid.org/0000-0001-7802-8167</orcidid><orcidid>https://orcid.org/0000-0001-8369-0251</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Convexity Crystal growth Defects Electron microscopy Engineering Sciences Lasers Materials Sapphire Scattering Titanium |
title | Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique |
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