A CH3NH3PbI3 film for a room-temperature NO2 gas sensor with quick response and high selectivity

A room-temperature NO2 gas sensor with excellent performances is fabricated using an MAPbI3 (MA = CH3NH3+) thin film. It presents a high response even under extremely low NO2 concentrations. Its average response and recovery times are only ∼5 s and ∼25 s at room temperature, respectively, exhibiting...

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Bibliographic Details
Published in:RSC advances 2018-01, Vol.8 (1), p.390-395
Main Authors: Fu, Xianwei, Jiao, Shilong, Dong, Ning, Lian, Gang, Zhao, Tianyu, Song, Lv, Wang, Qilong, Cui, Deliang
Format: Article
Language:English
Subjects:
Chemical reactions
Gas sensors
Nitrogen dioxide
Room temperature
Selectivity
Sensors
Online Access:Get full text
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Summary:A room-temperature NO2 gas sensor with excellent performances is fabricated using an MAPbI3 (MA = CH3NH3+) thin film. It presents a high response even under extremely low NO2 concentrations. Its average response and recovery times are only ∼5 s and ∼25 s at room temperature, respectively, exhibiting its quick-responsive character. In addition, the MAPbI3-based NO2 sensor exhibits good selectivity. Interestingly, the sensitivity of the MAPbI3-based NO2 sensor is strikingly improved under high-pressure gas conditions. This phenomenon can be used for the online monitoring of chemical reaction processes and in situ detection of trace-level gas impurities under high-pressure conditions. Furthermore, based on theoretical calculations, a simple model is proposed to illustrate the corresponding gas-sensing mechanism.
ISSN:2046-2069
DOI:10.1039/c7ra11149e