Phase change behavior of pseudo-binary ZnTe-ZnSb material

•Only one-step crystallization process with Sb precipitated has occurred in ZnTe-ZnSb.•ZnTe-ZnSb inherits fast crystallization of ZnTe and good thermal stability of ZnSb.•ZnTe-ZnSb inherits wide band gap of ZnTe and good phase-switching ability of ZnSb.•ZnTe-ZnSb possesses larger crystalline resista...

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Bibliographic Details
Published in:Materials letters 2018-02, Vol.213, p.342-345
Main Authors: Wang, Guoxiang, Zhang, Yawen, Liu, Peng, Wang, Jiangxing, Nie, Qiuhua, Shen, Xiang
Format: Article
Language:English
Subjects:
Band gap
Binary systems
Computer memory
Crystal structure
Crystallinity
Crystallization
Electrical properties
Materials science
Optical properties
Phase change materials
Thermal properties
Thermal stability
Thin films
Zinc tellurides
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Summary:•Only one-step crystallization process with Sb precipitated has occurred in ZnTe-ZnSb.•ZnTe-ZnSb inherits fast crystallization of ZnTe and good thermal stability of ZnSb.•ZnTe-ZnSb inherits wide band gap of ZnTe and good phase-switching ability of ZnSb.•ZnTe-ZnSb possesses larger crystalline resistance and higher crystallization temperature.•ZnTe-ZnSb keeps a large ON/OFF ratio with five orders of magnitude. The phase change behavior of pure ZnTe and pseudo-binary ZnTe-ZnSb material has been investigated systemically in terms of the electrical, thermal and optical properties. The results show that ZnTe is a composition with fast continuous crystallization, wide optical band gap and large crystalline resistance but thermally unstable and poor phase-switching ability. The pseudo-binary ZnTe-ZnSb material inherits the characteristics of fast crystallization and wide optical band gap from ZnTe and good thermal stability from ZnSb, respectively, and even shows better phase change properties with higher crystallization temperature and larger crystalline resistance. From these results, we conclude that ZnTe-ZnSb can be one of the most promising materials for phase change memory application.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2017.11.044