Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

• Published in: Journal of crystal growth 2018-01, Vol.482, p.56-60
• Main Authors: Turski, Henryk, Muzioł, Grzegorz, Siekacz, Marcin, Wolny, Pawel, Szkudlarek, Krzesimir, Feduniewicz-Żmuda, Anna, Dybko, Krzysztof, Skierbiszewski, Czeslaw
• Format: Article
• Language: English
• Subjects: A1. Doping; A3. Molecular beam epitaxy; Aluminum; B1. Gallium nitride; B1. Nitrides; Doping; Gallium nitrides; Magnesium; Mercury cadmium telluride epitaxy; Molecular beam epitaxy; Rates; Silicon; Studies; Substrates
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2017.11.001

•Doping of Ga(Al)N layers grown at high growth temperature using different growth rates was investigated.•For the constant Mg flux, doping level in GaN:Mg layers does not depend on used growth rate.•Increase in Mg concentration for AlGaN:Mg layers comparing to GaN:Mg layers grown at the same conditions was observed. Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.