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Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2
A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO 2 and a 60%Ar + 30%CO 2 + 10%СF 4 working mixture was stimulated by a 90 Sr β source. To accelerate the process of aging, the gas mixture flow to...
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Published in: | Physics of atomic nuclei 2017-12, Vol.80 (9), p.1532-1538 |
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container_end_page | 1538 |
container_issue | 9 |
container_start_page | 1532 |
container_title | Physics of atomic nuclei |
container_volume | 80 |
creator | Gavrilov, G. E. Vakhtel, V. M. Maysuzenko, D. A. Tavtorkina, T. A. Fetisov, A. A. Shvetsova, N. Yu |
description | A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO
2
and a 60%Ar + 30%CO
2
+ 10%СF
4
working mixture was stimulated by a
90
Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of
Q
= 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF
4
+ 20%CO
2
gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO
2
compounds was obtained. |
doi_str_mv | 10.1134/S1063778817090071 |
format | article |
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2
and a 60%Ar + 30%CO
2
+ 10%СF
4
working mixture was stimulated by a
90
Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of
Q
= 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF
4
+ 20%CO
2
gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO
2
compounds was obtained.</description><identifier>ISSN: 1063-7788</identifier><identifier>EISSN: 1562-692X</identifier><identifier>DOI: 10.1134/S1063778817090071</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Carbon dioxide ; Discharge ; Electron microscopy ; Interaction of Plasma ; Particle and Nuclear Physics ; Particle Beams ; Physics ; Physics and Astronomy ; Plasma etching ; Radiation With Matter ; Silicon compounds ; Silicon dioxide ; Strontium 90 ; Wire</subject><ispartof>Physics of atomic nuclei, 2017-12, Vol.80 (9), p.1532-1538</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-62652d9848b92c313e524f38c085a132fd1ab9d58d98fd5dc6271ead0dc95ebf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gavrilov, G. E.</creatorcontrib><creatorcontrib>Vakhtel, V. M.</creatorcontrib><creatorcontrib>Maysuzenko, D. A.</creatorcontrib><creatorcontrib>Tavtorkina, T. A.</creatorcontrib><creatorcontrib>Fetisov, A. A.</creatorcontrib><creatorcontrib>Shvetsova, N. Yu</creatorcontrib><title>Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2</title><title>Physics of atomic nuclei</title><addtitle>Phys. Atom. Nuclei</addtitle><description>A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO
2
and a 60%Ar + 30%CO
2
+ 10%СF
4
working mixture was stimulated by a
90
Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of
Q
= 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF
4
+ 20%CO
2
gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO
2
compounds was obtained.</description><subject>Carbon dioxide</subject><subject>Discharge</subject><subject>Electron microscopy</subject><subject>Interaction of Plasma</subject><subject>Particle and Nuclear Physics</subject><subject>Particle Beams</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Plasma etching</subject><subject>Radiation With Matter</subject><subject>Silicon compounds</subject><subject>Silicon dioxide</subject><subject>Strontium 90</subject><subject>Wire</subject><issn>1063-7788</issn><issn>1562-692X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEUxIMoqNUP4C0gnmQ1L9nsZo_SfwqFClXwtqTZpJuy3dQkRf32plTwIJ7ewMxvHgxCV0DuAFh-vwBSsLIUAkpSEVLCEToDXtCsqOjbcdLJzvb-KToPYU0IgODkDHUza3S0G43Hn1H3wboeO4Njq_FUBjyyQbXSrzQe6ahVdD7gDxtb_NzJsJF4HFVr-9UeWdjOqkSP9NYFGwO2PRbkZjjJ8S2mSczpBToxsgv68ucO0Otk_DJ8zGbz6dPwYZYpWoiYFbTgtKlELpYVVQyY5jQ3TCgiuARGTQNyWTVcpIxpeKMKWoKWDWlUxfXSsAG6PvRuvXvf6RDrtdv5Pr2sKQEGpcg5pBQcUsq7ELw29dbbjfRfNZB6P2r9Z9TE0AMTUrZfaf_b_D_0DYg8dmI</recordid><startdate>20171201</startdate><enddate>20171201</enddate><creator>Gavrilov, G. E.</creator><creator>Vakhtel, V. M.</creator><creator>Maysuzenko, D. A.</creator><creator>Tavtorkina, T. A.</creator><creator>Fetisov, A. A.</creator><creator>Shvetsova, N. Yu</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20171201</creationdate><title>Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2</title><author>Gavrilov, G. E. ; Vakhtel, V. M. ; Maysuzenko, D. A. ; Tavtorkina, T. A. ; Fetisov, A. A. ; Shvetsova, N. Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-62652d9848b92c313e524f38c085a132fd1ab9d58d98fd5dc6271ead0dc95ebf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Carbon dioxide</topic><topic>Discharge</topic><topic>Electron microscopy</topic><topic>Interaction of Plasma</topic><topic>Particle and Nuclear Physics</topic><topic>Particle Beams</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Plasma etching</topic><topic>Radiation With Matter</topic><topic>Silicon compounds</topic><topic>Silicon dioxide</topic><topic>Strontium 90</topic><topic>Wire</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gavrilov, G. E.</creatorcontrib><creatorcontrib>Vakhtel, V. M.</creatorcontrib><creatorcontrib>Maysuzenko, D. A.</creatorcontrib><creatorcontrib>Tavtorkina, T. A.</creatorcontrib><creatorcontrib>Fetisov, A. A.</creatorcontrib><creatorcontrib>Shvetsova, N. Yu</creatorcontrib><collection>CrossRef</collection><jtitle>Physics of atomic nuclei</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gavrilov, G. E.</au><au>Vakhtel, V. M.</au><au>Maysuzenko, D. A.</au><au>Tavtorkina, T. A.</au><au>Fetisov, A. A.</au><au>Shvetsova, N. Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2</atitle><jtitle>Physics of atomic nuclei</jtitle><stitle>Phys. Atom. Nuclei</stitle><date>2017-12-01</date><risdate>2017</risdate><volume>80</volume><issue>9</issue><spage>1532</spage><epage>1538</epage><pages>1532-1538</pages><issn>1063-7788</issn><eissn>1562-692X</eissn><abstract>A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO
2
and a 60%Ar + 30%CO
2
+ 10%СF
4
working mixture was stimulated by a
90
Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of
Q
= 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF
4
+ 20%CO
2
gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO
2
compounds was obtained.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063778817090071</doi><tpages>7</tpages></addata></record> |
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issn | 1063-7788 1562-692X |
language | eng |
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subjects | Carbon dioxide Discharge Electron microscopy Interaction of Plasma Particle and Nuclear Physics Particle Beams Physics Physics and Astronomy Plasma etching Radiation With Matter Silicon compounds Silicon dioxide Strontium 90 Wire |
title | Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2 |
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