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Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO 2 and a 60%Ar + 30%CO 2 + 10%СF 4 working mixture was stimulated by a 90 Sr β source. To accelerate the process of aging, the gas mixture flow to...

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Published in:Physics of atomic nuclei 2017-12, Vol.80 (9), p.1532-1538
Main Authors: Gavrilov, G. E., Vakhtel, V. M., Maysuzenko, D. A., Tavtorkina, T. A., Fetisov, A. A., Shvetsova, N. Yu
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container_end_page 1538
container_issue 9
container_start_page 1532
container_title Physics of atomic nuclei
container_volume 80
creator Gavrilov, G. E.
Vakhtel, V. M.
Maysuzenko, D. A.
Tavtorkina, T. A.
Fetisov, A. A.
Shvetsova, N. Yu
description A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO 2 and a 60%Ar + 30%CO 2 + 10%СF 4 working mixture was stimulated by a 90 Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF 4 + 20%CO 2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO 2 compounds was obtained.
doi_str_mv 10.1134/S1063778817090071
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subjects Carbon dioxide
Discharge
Electron microscopy
Interaction of Plasma
Particle and Nuclear Physics
Particle Beams
Physics
Physics and Astronomy
Plasma etching
Radiation With Matter
Silicon compounds
Silicon dioxide
Strontium 90
Wire
title Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2
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