Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization

Sulfurization with sulfur vapor has been demonstrated to be useful for fabricating sputtered-multilayer MoS 2 films with an approximately 4-nm thickness. With this process, sulfur vacancies in the sputtered MoS 2 films were remarkably compensated, and MoO 3 was simultaneously sulfurized. Eventually,...

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Bibliographic Details
Published in:Journal of electronic materials 2018-07, Vol.47 (7), p.3497-3501
Main Authors: Matsuura, Kentaro, Ohashi, Takumi, Muneta, Iriya, Ishihara, Seiya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi, Wakabayashi, Hitoshi
Format: Article
Language:English
Subjects:
Carrier density
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Instrumentation
Materials research
Materials Science
Molybdenum disulfide
Molybdenum trioxide
Optical and Electronic Materials
Solid State Physics
Sulfur
Sulfurization
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Description
Summary:Sulfurization with sulfur vapor has been demonstrated to be useful for fabricating sputtered-multilayer MoS 2 films with an approximately 4-nm thickness. With this process, sulfur vacancies in the sputtered MoS 2 films were remarkably compensated, and MoO 3 was simultaneously sulfurized. Eventually, carrier densities of the sulfurized MoS 2 films were successfully reduced to 1.8 × 10 16  cm −3 and electron mobilities were considerably enhanced to 25.2 cm 2 /V-s.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-018-6191-z