Prospects of Ternary Cd1−x Zn x S as an Electron Transport Layer and Associated Interface Defects in a Planar Lead Halide Perovskite Solar Cell via Numerical Simulation

• Published in: Journal of electronic materials 2018-05, Vol.47 (5), p.3051-3058
• Main Authors: Towhid Hossain Chowdhury, Ferdaous, Mohammad Tanvirul, Mohd Aizat Abdul Wadi, Chelvanathan, Puvaneswaran, Amin, Nowshad, Islam, Ashraful, Kamaruddin, Nurhafiza, Muhammad Irsyamuddin M Zin, Ruslan, Mohd Hafidz, Kamaruzzaman Bin Sopian, Akhtaruzzaman, Md
• Format: Article
• Language: English
• Subjects: Absorbers; Computer simulation; Defects; Electron transport; Electrons; Materials research; Mathematical models; Open circuit voltage; Photovoltaic cells; Short circuits; Silicon wafers; Solar cells; Ternary alloys
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-018-6154-4

In this study we present a ternary alloy, Cd1−xZnxS as an electron transport layer for a planar lead halide perovskite solar cell via numerical simulation with solar cell capacitance simulator (SCAPS) software. Performance dependence on molar composition variation in the Cd1−xZnxS alloy was studied for the mixed perovskite CH3NH3PbI3−xClx absorber and spiro-OMeTAD hole transport material in a planar perovskite solar cell. Additionally, the defects on both Cd1−xZnxS/CH3NH3PbI3−xClx and CH3NH3PbI3−xClx/spiro-OMeTAD interface were thoroughly investigated. Simultaneously, a thickness of 700 nm for CH3NH3PbI3−xClx absorber with 50-nm-thick Cd0.2Zn0.8S (x = 0.8) was optimized. Analysis of the numerical solutions via SCAPS provides a trend and pattern for Cd0.2Zn0.8S as an effective electron transport layer for planar perovskite solar cells with a yield efficiency up to 24.83%. The planar perovskite solar cell shows an open-circuit voltage of 1.224 V, short-circuit current density of 25.283 mA/cm2 and a fill factor of 80.22.