Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique

We have successfully synthesized p-type Cu 3 (Sb 1−x In x )Se 4 thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018-05, Vol.29 (10), p.8793-8800
Main Authors: Ghanwat, Vishvanath B., Mali, Sawanta S., Bagade, Chaitali S., Khot, Kishorkumar V., Desai, Neha D., Hong, Chang Kook, Bhosale, P. N.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemical precipitation
Chemistry and Materials Science
Figure of merit
Glass substrates
Heat conductivity
Investigations
Literature reviews
Materials Science
Microscopy
Morphology
Optical and Electronic Materials
Plasma sintering
Quantum dots
Synthesis
Thin films
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Summary:We have successfully synthesized p-type Cu 3 (Sb 1−x In x )Se 4 thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu 3 (Sb 0.92 In 0.08 )Se 4 thin film at 300 K.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-018-8896-4