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Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique
We have successfully synthesized p-type Cu 3 (Sb 1−x In x )Se 4 thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical...
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| Published in: | Journal of materials science. Materials in electronics 2018-05, Vol.29 (10), p.8793-8800 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c316t-5524bc3d1e7fd44e07fdb8c3713a4403da9fc33b9a2436273b8c7e282c5563c53 |
| container_end_page | 8800 |
| container_issue | 10 |
| container_start_page | 8793 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 29 |
| creator | Ghanwat, Vishvanath B. Mali, Sawanta S. Bagade, Chaitali S. Khot, Kishorkumar V. Desai, Neha D. Hong, Chang Kook Bhosale, P. N. |
| description | We have successfully synthesized p-type Cu
3
(Sb
1−x
In
x
)Se
4
thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu
3
(Sb
0.92
In
0.08
)Se
4
thin film at 300 K. |
| doi_str_mv | 10.1007/s10854-018-8896-4 |
| format | article |
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3
(Sb
1−x
In
x
)Se
4
thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu
3
(Sb
0.92
In
0.08
)Se
4
thin film at 300 K.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-018-8896-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemical precipitation ; Chemistry and Materials Science ; Figure of merit ; Glass substrates ; Heat conductivity ; Investigations ; Literature reviews ; Materials Science ; Microscopy ; Morphology ; Optical and Electronic Materials ; Plasma sintering ; Quantum dots ; Synthesis ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2018-05, Vol.29 (10), p.8793-8800</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-5524bc3d1e7fd44e07fdb8c3713a4403da9fc33b9a2436273b8c7e282c5563c53</citedby><cites>FETCH-LOGICAL-c316t-5524bc3d1e7fd44e07fdb8c3713a4403da9fc33b9a2436273b8c7e282c5563c53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ghanwat, Vishvanath B.</creatorcontrib><creatorcontrib>Mali, Sawanta S.</creatorcontrib><creatorcontrib>Bagade, Chaitali S.</creatorcontrib><creatorcontrib>Khot, Kishorkumar V.</creatorcontrib><creatorcontrib>Desai, Neha D.</creatorcontrib><creatorcontrib>Hong, Chang Kook</creatorcontrib><creatorcontrib>Bhosale, P. N.</creatorcontrib><title>Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>We have successfully synthesized p-type Cu
3
(Sb
1−x
In
x
)Se
4
thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu
3
(Sb
0.92
In
0.08
)Se
4
thin film at 300 K.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemical precipitation</subject><subject>Chemistry and Materials Science</subject><subject>Figure of merit</subject><subject>Glass substrates</subject><subject>Heat conductivity</subject><subject>Investigations</subject><subject>Literature reviews</subject><subject>Materials Science</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Optical and Electronic Materials</subject><subject>Plasma sintering</subject><subject>Quantum dots</subject><subject>Synthesis</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOD5-gLuAG11U8-wDVzKMWhhwMQruQpvezmSYpjXJLMatf9yUCq5cnQv3O-fAQeiKkjtKSHbvKcmlSAjNkzwv0kQcoRmVGU9Ezj6O0YwUMkuEZOwUnXm_JYSkgucz9L2wm8pq6MAGbCwOG3BdDzvQwRmNB3Bt77qRwH2L53u-qlcgIhbZ1uw6j-sDLu1NWZa3uOkHY9cP2B9szPHmC5rxXTkHPsR7cKDNYEIVTB-rQG-s-dzDBTppq52Hy189R-9Pi7f5S7J8fS7nj8tEc5qGREomas0bClnbCAEkSp1rnlFeCUF4UxWt5rwuKiZ4yjIenxmwnGkpU64lP0fXU-7g-ljrg9r2e2djpWKEZpzxVLBI0YnSrvfeQasGZ7rKHRQlatxaTVuruLUat1Yietjk8ZG1a3B_yf-bfgA_qoMK</recordid><startdate>20180501</startdate><enddate>20180501</enddate><creator>Ghanwat, Vishvanath B.</creator><creator>Mali, Sawanta S.</creator><creator>Bagade, Chaitali S.</creator><creator>Khot, Kishorkumar V.</creator><creator>Desai, Neha D.</creator><creator>Hong, Chang Kook</creator><creator>Bhosale, P. N.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20180501</creationdate><title>Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique</title><author>Ghanwat, Vishvanath B. ; Mali, Sawanta S. ; Bagade, Chaitali S. ; Khot, Kishorkumar V. ; Desai, Neha D. ; Hong, Chang Kook ; Bhosale, P. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-5524bc3d1e7fd44e07fdb8c3713a4403da9fc33b9a2436273b8c7e282c5563c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemical precipitation</topic><topic>Chemistry and Materials Science</topic><topic>Figure of merit</topic><topic>Glass substrates</topic><topic>Heat conductivity</topic><topic>Investigations</topic><topic>Literature reviews</topic><topic>Materials Science</topic><topic>Microscopy</topic><topic>Morphology</topic><topic>Optical and Electronic Materials</topic><topic>Plasma sintering</topic><topic>Quantum dots</topic><topic>Synthesis</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ghanwat, Vishvanath B.</creatorcontrib><creatorcontrib>Mali, Sawanta S.</creatorcontrib><creatorcontrib>Bagade, Chaitali S.</creatorcontrib><creatorcontrib>Khot, Kishorkumar V.</creatorcontrib><creatorcontrib>Desai, Neha D.</creatorcontrib><creatorcontrib>Hong, Chang Kook</creatorcontrib><creatorcontrib>Bhosale, P. N.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ghanwat, Vishvanath B.</au><au>Mali, Sawanta S.</au><au>Bagade, Chaitali S.</au><au>Khot, Kishorkumar V.</au><au>Desai, Neha D.</au><au>Hong, Chang Kook</au><au>Bhosale, P. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2018-05-01</date><risdate>2018</risdate><volume>29</volume><issue>10</issue><spage>8793</spage><epage>8800</epage><pages>8793-8800</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>We have successfully synthesized p-type Cu
3
(Sb
1−x
In
x
)Se
4
thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu
3
(Sb
0.92
In
0.08
)Se
4
thin film at 300 K.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-018-8896-4</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2018-05, Vol.29 (10), p.8793-8800 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| source | Springer Link |
| subjects | Characterization and Evaluation of Materials Chemical precipitation Chemistry and Materials Science Figure of merit Glass substrates Heat conductivity Investigations Literature reviews Materials Science Microscopy Morphology Optical and Electronic Materials Plasma sintering Quantum dots Synthesis Thin films |
| title | Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique |
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