Pseudohalide‐Induced 2D (CH3NH3)2PbI2(SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most o...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-03, Vol.14 (12), p.n/a
Main Authors: Cheng, Xue‐Feng, Hou, Xiang, Zhou, Jin, Gao, Bi‐Jun, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei
Format: Article
Language:English
Subjects:
Data storage
Fatigue tests
Filaments
Glass substrates
Memory devices
Nanotechnology
perovskite
Perovskites
Polyethylene terephthalate
pseudohalide
RRAM
Switches
ternary memory
Tin oxides
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Summary:Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide‐induced 2D (CH3NH3)2PbI2(SCN)2 perovskite thin film is prepared by using a one‐step solution method and fabricated into Al/perovskite film/indium–tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:103:107, long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current–voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere. Pseudohalide‐induced 2D (CH3NH3)2PbI2(SCN)3 perovskite film is prepared. The as‐fabricated memory devices perform ternary write‐once‐read‐many‐times memory behavior with high ternary device yield (74%). Even after 500 times bending, the ternary memory behavior is still maintained, indicating potential applications of 2D perovskite materials in high‐density data storage via random resistive access memory technology.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201703667