High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In 2 O 3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mo...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (13), p.3220-3225
Main Authors: Gillan, Liam, Leppäniemi, Jaakko, Eiroma, Kim, Majumdar, Himadri, Alastalo, Ari
Format: Article
Language:English
Subjects:
Contact resistance
Electrodes
Electron transport
Indium oxides
Polyethyleneimine
Semiconductor devices
Thin film transistors
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Summary:This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In 2 O 3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm 2 (V s) −1 to ∼3.0 cm 2 (V s) −1 . The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.
ISSN:2050-7526
2050-7534
DOI:10.1039/C7TC05679F