Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia

• Published in: Russian microelectronics 2018-03, Vol.47 (2), p.118-130
• Main Authors: Abdulagatov, A. I., Ramazanov, Sh. M., Dallaev, R. S., Murliev, E. K., Palchaev, D. K., Rabadanov, M. Kh, Abdulagatov, I. M.
• Format: Article
• Language: English
• Subjects: Aluminum; Aluminum nitride; Ammonia; Atomic layer epitaxy; Bulk density; Electrical Engineering; Engineering; Impurities; Surface reactions; Thermochemistry
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739718020026

Aluminum nitride (AlN x ) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N 2 H 4 ) or ammonia (NH 3 ). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH 3 ) at temperatures from 150 to 225°C were self-limiting. The rates of deposition of the nitride film at 200°C for systems with N 2 H 4 and NH 3 coincided: ~1.1 Å/cycle. The ALD AlN films obtained at 200°C using hydrazine had higher density (2.36 g/cm 3 , 72.4% of bulk density) than those obtained with ammonia (2.22 g/cm 3 , 68%). The elemental analysis of the film deposited using TDEAA/N2H4 at 200°C showed the presence of carbon (~1.4 at %), oxygen (~3.2 at %), and hydrogen (22.6 at %) impurities. The N/Al atomic concentration ratio was ~1.3. The residual impurity content in the case of N 2 H 4 was lower than for NH 3 . In general, it was confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.