Structural, optical and electrical properties of pure and Fe doped V2O5 nanoparticles for junction diode fabrications

Structural, optical and electrical studies of V 2 O 5 and Fe x V 2 O 5 (x = 5%) nanostructures synthesized by a wet chemical method have been reported. The synthesized nanostructures were characterized by XRD, SEM–EDX, HRTEM, XPS, UV(DRS), FT-IR, PL, TG–DTA, AC and DC conductivity study’s. The anort...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018-06, Vol.29 (12), p.9840-9853
Main Authors: Pradeep, I., Ranjith Kumar, E., Suriyanaranan, N., Srinivas, Ch, Venkata Rao, N.
Format: Article
Language:English
Subjects:
Blue shift
Characterization and Evaluation of Materials
Chemical synthesis
Chemistry and Materials Science
Diodes
Electrical properties
Electrical resistivity
Emission analysis
Heat treatment
Iron
Junction diodes
Materials Science
Nanorods
Nanostructure
Optical and Electronic Materials
Optical properties
Orthorhombic phase
Phase transitions
Schottky diodes
Spray pyrolysis
Thermal analysis
Vanadium pentoxide
X ray photoelectron spectroscopy
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Summary:Structural, optical and electrical studies of V 2 O 5 and Fe x V 2 O 5 (x = 5%) nanostructures synthesized by a wet chemical method have been reported. The synthesized nanostructures were characterized by XRD, SEM–EDX, HRTEM, XPS, UV(DRS), FT-IR, PL, TG–DTA, AC and DC conductivity study’s. The anorthic phase was observed in the XRD patterns of undoped and Fe doped samples which are prepared at low temperature. This anorthic phase was reduced with the heat treatment and gradually transformed into orthorhombic phase in the samples annealed at 600 °C for 1 h. The change in the surface morphology in the present samples from micro-rod to nanorods network seems to be dependent on the substitution of Fe. As observed from the PL analysis that the ultraviolet (UV) emission intensity was found to be decreased and exhibited a blue shift with the increase of Fe concentration. The analysis of AC and DC conductivity measurements recorded at room temperature in the temperature range of 303–403 K, revealed that the activation energy is high for Fe doped V 2 O 5 compared to undoped V 2 O 5 . The junction diodes of n-V 2 O 5 /p-Si and V 2 O 5 :Fe/p-Si was successfully prepared by the nebulizer spray pyrolysis method. The ( I–V ) characteristics of nonlinear and asymmetric nature revealed the Schottky diode based behavior for pure and doped samples.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-018-9024-1