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Structural, optical and photoelectrical properties of thermally annealed amorphous In15Sb15Se70 chalcogenide films

In this work, the effect of annealing on the structure and photoelectrical properties of In 15 Sb 15 Se 70 films has been investigated. The annealed films (333–453 K) were characterized by XRD, SEM, TEM, optical absorption, Raman spectroscopy and photoconductivity measurements. The amorphous/crystal...

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Published in:Applied physics. A, Materials science & processing Materials science & processing, 2018-05, Vol.124 (5), p.1-9, Article 357
Main Authors: Sharma, Shaveta, Sharma, Rita, Kumar, Praveen, Thangaraj, R., Asokan, K., Mian, M.
Format: Article
Language:English
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Summary:In this work, the effect of annealing on the structure and photoelectrical properties of In 15 Sb 15 Se 70 films has been investigated. The annealed films (333–453 K) were characterized by XRD, SEM, TEM, optical absorption, Raman spectroscopy and photoconductivity measurements. The amorphous/crystalline structure of as-prepared and annealed samples was confirmed by XRD and SEM/TEM studies. The crystallization of Se, Sb 2 Se 3 and In 4 Se 3 phases has been observed upon annealing of the film samples. The position and shape of Raman bands have been significantly altered with annealing temperature. The indirect optical gap varies from 1.53 to 1.08 eV which is very useful for solar cell applications. DC activation energy and photosensitivity were found to decrease with annealing temperature. The decay of photocurrents was well fitted to stretched exponential function and the minimum value for fit parameters for the sample annealed at 373 K has revealed least defect states in mobility gap for In 15 Sb 15 Se 70 films.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-018-1771-6