Electrochemical, microstructural, compositional and optical characterization of copper oxide and copper sulfide thin films

• Published in: Journal of materials science. Materials in electronics 2018-09, Vol.29 (18), p.15529-15534
• Main Authors: Thanikaikarasan, Sethuramachandran, Perumal, Rajagembu, Sankaranarayanan, Krishnasamy, Mahalingam, Thaiyan
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Copper oxides; Copper sulfides; Dispersion; Energy dispersive X ray analysis; Materials Science; Morphology; Optical and Electronic Materials; Optical properties; Scanning electron microscopy; Stoichiometry; Substrates; Thin films; Tin dioxide; X ray analysis; X-ray diffraction; X-rays
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-018-9109-x

In this work, we have focused the effect of substrate on electrochemically grown copper oxide and copper sulfide thin films. The prepared films have been subjected to X-ray diffraction, scanning electron microscopy, Energy dispersive X-ray analysis, UV–Visible spectroscopic techniques for the determination crystalline nature, morphology, composition and optical properties. X-ray diffraction results indicated the deposited films exhibited cubic structure with most reflection along (110), (220) planes for copper oxide and copper sulfide. Scanning electron microscopy along with energy dispersive analysis by X-rays showed that films with uniform morphology and nearly stoichiometry have been obtained for film obtained on SnO 2 substrate. Optical absorption and transmittance measurements showed that the deposited films exhibited band gap value of 2.28 and 2.45 eV for copper oxide and copper sulfide.