Loading…

AlInSb Mid‐Infrared LEDs of High Luminous Efficiency for Gas Sensors

In this paper, performance of mid‐infrared light emitting diodes (LEDs) with an InSb buffer layer and AlInSb active/barrier layers, emitting at room temperature is reported. This film structure makes an ideal base material in view of carrier confinement and crystalline quality. In order to achieve a...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-04, Vol.215 (8), p.n/a
Main Authors: Fujita, Hiromi, Ueno, Koichiro, Morohara, Osamu, Camargo, Edson, Geka, Hirotaka, Shibata, Yoshihiko, Kuze, Naohiro
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, performance of mid‐infrared light emitting diodes (LEDs) with an InSb buffer layer and AlInSb active/barrier layers, emitting at room temperature is reported. This film structure makes an ideal base material in view of carrier confinement and crystalline quality. In order to achieve a high efficiency for light extraction, backside emission architecture is adopted together with a rough emitting surface and TiO2 anti‐reflection coating. The resulting AlInSb LED shows 75% higher power conversion efficiency than the reference, which has the highest efficiency in the market to date. AlInSb mid‐infrared light emitting diode (LED) in a plastic‐mold package is fabricated, which shows 75% higher power conversion efficiency than the highest performance LED in the market. This highly efficient structure is achieved by the adoption of AlInSb/InSb double buffer layer and AlInSb/AlInSb carrier confinement layers, as well as back‐side emission architecture. In addition, roughening and TiO2 anti‐reflection coating processes are applied to the emitting surface.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700449