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AlInSb Mid‐Infrared LEDs of High Luminous Efficiency for Gas Sensors
In this paper, performance of mid‐infrared light emitting diodes (LEDs) with an InSb buffer layer and AlInSb active/barrier layers, emitting at room temperature is reported. This film structure makes an ideal base material in view of carrier confinement and crystalline quality. In order to achieve a...
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Published in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2018-04, Vol.215 (8), p.n/a |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper, performance of mid‐infrared light emitting diodes (LEDs) with an InSb buffer layer and AlInSb active/barrier layers, emitting at room temperature is reported. This film structure makes an ideal base material in view of carrier confinement and crystalline quality. In order to achieve a high efficiency for light extraction, backside emission architecture is adopted together with a rough emitting surface and TiO2 anti‐reflection coating. The resulting AlInSb LED shows 75% higher power conversion efficiency than the reference, which has the highest efficiency in the market to date.
AlInSb mid‐infrared light emitting diode (LED) in a plastic‐mold package is fabricated, which shows 75% higher power conversion efficiency than the highest performance LED in the market. This highly efficient structure is achieved by the adoption of AlInSb/InSb double buffer layer and AlInSb/AlInSb carrier confinement layers, as well as back‐side emission architecture. In addition, roughening and TiO2 anti‐reflection coating processes are applied to the emitting surface. |
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ISSN: | 1862-6300 1862-6319 |
DOI: | 10.1002/pssa.201700449 |