Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si3N4/SiO2 membrane

A thin‐film spiral antenna‐coupled Bi microbolometer was fabricated on a Si3N4/SiO2 membrane. The membrane was realized by wet etching from the back of an Si substrate using a 26 wt% KOH solution. The antenna was designed in accordance with the current band theory so that it covers the frequency ran...

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Bibliographic Details
Published in:IEEJ transactions on electrical and electronic engineering 2018-06, Vol.13 (6), p.876-881
Main Authors: Uchida, Takashi, Matsushita, Akihito, Tachiki, Takashi
Format: Article
Language:English
Subjects:
antenna‐coupled device
Band theory
Bolometers
microbolometer
Silicon dioxide
Silicon nitride
Silicon substrates
Spiral antennas
terahertz detector
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Summary:A thin‐film spiral antenna‐coupled Bi microbolometer was fabricated on a Si3N4/SiO2 membrane. The membrane was realized by wet etching from the back of an Si substrate using a 26 wt% KOH solution. The antenna was designed in accordance with the current band theory so that it covers the frequency range of 140–220 GHz. The experimental patterns for antennas located on the membrane and on the membrane backed by a copper plate reflector were in good agreement with theoretical patterns for the antenna located in air. Furthermore, a wide band characteristic of the antenna ranging from 140 to 220 GHz was obtained. The responsivity of the Bi microbolometer on the membrane estimated from the DC sensitivity under the irradiation of 220 GHz electromagnetic wave was 110 V/W. This value is about one order of magnitude higher than that of a Bi bolometer fabricated on a dielectric substrate. © 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
ISSN:1931-4973
1931-4981
DOI:10.1002/tee.22641