Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon

Elastically strained metastable Ge 1– x Sn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid hel...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2018-04, Vol.82 (4), p.418-423
Main Authors: Martovitsky, V. P., Aleshchenko, Yu. A., Krivobok, V. S., Muratov, A. V., Klekovkin, A. V., Mehiya, A. B.
Format: Article
Language:English
Subjects:
Germanium
Hadrons
Heavy Ions
Helium
Heterostructures
Liquid helium
Molecular beam epitaxy
Molecular beams
Nuclear Physics
Optical properties
Optoelectronic devices
Photoluminescence
Physics
Physics and Astronomy
Silicon substrates
Spectra
Tin
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Summary:Elastically strained metastable Ge 1– x Sn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid helium temperature. The room temperature direct intrinsic absorption edge at 0.71–0.72 eV is visible in the spectra of the studied structures with tin contents of 12–13%.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873818040123