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Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon
Elastically strained metastable Ge 1– x Sn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid hel...
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| Published in: | Bulletin of the Russian Academy of Sciences. Physics 2018-04, Vol.82 (4), p.418-423 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c2313-fa49a862564327afd581827637e7dd688aba0c0d3d8b5efcc1839940e4c5f3d43 |
| container_end_page | 423 |
| container_issue | 4 |
| container_start_page | 418 |
| container_title | Bulletin of the Russian Academy of Sciences. Physics |
| container_volume | 82 |
| creator | Martovitsky, V. P. Aleshchenko, Yu. A. Krivobok, V. S. Muratov, A. V. Klekovkin, A. V. Mehiya, A. B. |
| description | Elastically strained metastable Ge
1–
x
Sn
x
layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid helium temperature. The room temperature direct intrinsic absorption edge at 0.71–0.72 eV is visible in the spectra of the studied structures with tin contents of 12–13%. |
| doi_str_mv | 10.3103/S1062873818040123 |
| format | article |
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1–
x
Sn
x
layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid helium temperature. The room temperature direct intrinsic absorption edge at 0.71–0.72 eV is visible in the spectra of the studied structures with tin contents of 12–13%.</description><identifier>ISSN: 1062-8738</identifier><identifier>EISSN: 1934-9432</identifier><identifier>DOI: 10.3103/S1062873818040123</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Germanium ; Hadrons ; Heavy Ions ; Helium ; Heterostructures ; Liquid helium ; Molecular beam epitaxy ; Molecular beams ; Nuclear Physics ; Optical properties ; Optoelectronic devices ; Photoluminescence ; Physics ; Physics and Astronomy ; Silicon substrates ; Spectra ; Tin</subject><ispartof>Bulletin of the Russian Academy of Sciences. Physics, 2018-04, Vol.82 (4), p.418-423</ispartof><rights>Allerton Press, Inc. 2018</rights><rights>Bulletin of the Russian Academy of Sciences: Physics is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2313-fa49a862564327afd581827637e7dd688aba0c0d3d8b5efcc1839940e4c5f3d43</citedby><cites>FETCH-LOGICAL-c2313-fa49a862564327afd581827637e7dd688aba0c0d3d8b5efcc1839940e4c5f3d43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Martovitsky, V. P.</creatorcontrib><creatorcontrib>Aleshchenko, Yu. A.</creatorcontrib><creatorcontrib>Krivobok, V. S.</creatorcontrib><creatorcontrib>Muratov, A. V.</creatorcontrib><creatorcontrib>Klekovkin, A. V.</creatorcontrib><creatorcontrib>Mehiya, A. B.</creatorcontrib><title>Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon</title><title>Bulletin of the Russian Academy of Sciences. Physics</title><addtitle>Bull. Russ. Acad. Sci. Phys</addtitle><description>Elastically strained metastable Ge
1–
x
Sn
x
layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid helium temperature. The room temperature direct intrinsic absorption edge at 0.71–0.72 eV is visible in the spectra of the studied structures with tin contents of 12–13%.</description><subject>Germanium</subject><subject>Hadrons</subject><subject>Heavy Ions</subject><subject>Helium</subject><subject>Heterostructures</subject><subject>Liquid helium</subject><subject>Molecular beam epitaxy</subject><subject>Molecular beams</subject><subject>Nuclear Physics</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon substrates</subject><subject>Spectra</subject><subject>Tin</subject><issn>1062-8738</issn><issn>1934-9432</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1UMtKAzEUHUTBWv0AdwHXo3nOZJa2alto6aK6HtLMnZoyndQkI3Yh-A_-oV9iSgUX4ubeC-dxOSdJLgm-ZgSzmwXBGZU5k0RijgllR0mPFIynBWf0ON4RTvf4aXLm_RpjIQoqesn7zDagu0Y5NAC1QfdbE9TbDtkaLczXx-cI4li0aAwBnPXBdTp0DjyqrUMz29rGhGejVdPs0KQNsHIqQIXm22AhGgdnW6PRHbwaHUUD5SNo2-jdGG3b8-SkVo2Hi5_dT54e7h-H43Q6H02Gt9NUU0ZYWiteKJlRkcUwuaorEWPSPGM55FWVSamWCmtcsUouBdRaE8mKgmPgWtSs4qyfXB18t86-dOBDubada-PLkmLGicgyISOLHFg6JvUO6nLrzEa5XUlwuW-5_NNy1NCDxkduuwL36_y_6BsWEYGJ</recordid><startdate>20180401</startdate><enddate>20180401</enddate><creator>Martovitsky, V. P.</creator><creator>Aleshchenko, Yu. A.</creator><creator>Krivobok, V. S.</creator><creator>Muratov, A. V.</creator><creator>Klekovkin, A. V.</creator><creator>Mehiya, A. B.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20180401</creationdate><title>Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon</title><author>Martovitsky, V. P. ; Aleshchenko, Yu. A. ; Krivobok, V. S. ; Muratov, A. V. ; Klekovkin, A. V. ; Mehiya, A. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2313-fa49a862564327afd581827637e7dd688aba0c0d3d8b5efcc1839940e4c5f3d43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Germanium</topic><topic>Hadrons</topic><topic>Heavy Ions</topic><topic>Helium</topic><topic>Heterostructures</topic><topic>Liquid helium</topic><topic>Molecular beam epitaxy</topic><topic>Molecular beams</topic><topic>Nuclear Physics</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon substrates</topic><topic>Spectra</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Martovitsky, V. P.</creatorcontrib><creatorcontrib>Aleshchenko, Yu. A.</creatorcontrib><creatorcontrib>Krivobok, V. 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Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Martovitsky, V. P.</au><au>Aleshchenko, Yu. A.</au><au>Krivobok, V. S.</au><au>Muratov, A. V.</au><au>Klekovkin, A. V.</au><au>Mehiya, A. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon</atitle><jtitle>Bulletin of the Russian Academy of Sciences. Physics</jtitle><stitle>Bull. Russ. Acad. Sci. Phys</stitle><date>2018-04-01</date><risdate>2018</risdate><volume>82</volume><issue>4</issue><spage>418</spage><epage>423</epage><pages>418-423</pages><issn>1062-8738</issn><eissn>1934-9432</eissn><abstract>Elastically strained metastable Ge
1–
x
Sn
x
layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR transmission spectra are measured at the liquid helium temperature. The room temperature direct intrinsic absorption edge at 0.71–0.72 eV is visible in the spectra of the studied structures with tin contents of 12–13%.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1062873818040123</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 1062-8738 |
| ispartof | Bulletin of the Russian Academy of Sciences. Physics, 2018-04, Vol.82 (4), p.418-423 |
| issn | 1062-8738 1934-9432 |
| language | eng |
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| source | Springer Link |
| subjects | Germanium Hadrons Heavy Ions Helium Heterostructures Liquid helium Molecular beam epitaxy Molecular beams Nuclear Physics Optical properties Optoelectronic devices Photoluminescence Physics Physics and Astronomy Silicon substrates Spectra Tin |
| title | Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon |
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