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Enhanced photocatalytic activity of direct Z-scheme Bi2O3/g-C3N4 composites via facile one-step fabrication
Coupling oxidation type semiconductors is a feasible strategy to improve the photocatalytic activity of reduction type g-C3N4 photocatalysts. In this work, Bi2O3 was used as an oxidation type semiconductor to construct direct Z-scheme Bi2O3/g-C3N4 photocatalysts by a one-step calcination method. The...
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Published in: | Journal of materials research 2018-05, Vol.33 (10), p.1391-1400 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Coupling oxidation type semiconductors is a feasible strategy to improve the photocatalytic activity of reduction type g-C3N4 photocatalysts. In this work, Bi2O3 was used as an oxidation type semiconductor to construct direct Z-scheme Bi2O3/g-C3N4 photocatalysts by a one-step calcination method. The obtained Bi2O3/g-C3N4 composites exhibited excellent photocatalytic activity and stability toward methylene blue degradation under visible light irradiation. The composite with 1% weight content of Bi2O3 to g-C3N4 exhibited the highest photocatalytic activity with an apparent rate constant of 0.063 min−1, which was 3.0 and 3.7 times higher than that of pure Bi2O3 and g-C3N4, respectively. The enhanced photocatalytic activity of the Bi2O3/g-C3N4 composite was mainly attributed to the improved charge separation efficiency and stronger redox ability. This work gave a new insight in developing g-C3N4-based Z-scheme heterojunction photocatalysts with enhanced photocatalytic activity. |
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ISSN: | 0884-2914 2044-5326 |
DOI: | 10.1557/jmr.2018.67 |