Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective...

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Bibliographic Details
Published in:Journal of nanomaterials 2018-01, Vol.2018 (2018), p.1-7
Main Authors: Watanabe, K., Taniguchi, T., Liang, Chi-Te, Aoki, Nobuyuki, Lin, L.-H., Kim, Gil-Ho, Wu, Bi-Yi, Liu, C.-W., Matsunaga, M., Matsumoto, N., Mineharu, M., Chuang, Chiashain, Ochiai, Yuichi
Format: Article
Language:English
Subjects:
Applied physics
Chemical vapor deposition
Cooling
Energy
Graphene
Heat
Multilayers
Nanomaterials
Resistance
Temperature
Variation
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Summary:We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature T e at various driving currents I while keeping the lattice temperature T L fixed. Interestingly, it is found that T e is proportional to I, indicating little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier P e is proportional to ( T e 2 - T L 2 ), suggesting the heat diffusion rather than acoustic phonon processes in our system. The long energy relaxation times due to the weak electron-phonon coupling in CVD graphene capped with h-BN layer as well as in exfoliated multilayer graphene can find applications in hot carrier graphene-based devices.
ISSN:1687-4110
1687-4129
DOI:10.1155/2018/5174103