Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar^sup +^ ion implantation using oil-immersion Raman spectroscopy

Biaxial stress states in SiGe stripes on Si substrates fabricated by a novel selective Ar+ ion implantation technique were evaluated by oil-immersion Raman spectroscopy. The oil-immersion technique is appropriate for the measurement of strain induced in nanostructure devices, because it has a higher...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-05, Vol.56 (5), p.051301
Main Authors: Yamamoto, Shotaro, Kosemura, Daisuke, Takeuchi, Kazuma, Ishihara, Seiya, Sawano, Kentarou, Nohira, Hiroshi, Ogura, Atsushi
Format: Article
Language:English
Subjects:
Axial stress
Deformation
Epitaxial growth
Ion implantation
Nanotechnology devices
Raman spectroscopy
Semiconductor devices
Silicon germanides
Silicon substrates
Spatial resolution
Spectroscopic analysis
Spectrum analysis
Transistors
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Summary:Biaxial stress states in SiGe stripes on Si substrates fabricated by a novel selective Ar+ ion implantation technique were evaluated by oil-immersion Raman spectroscopy. The oil-immersion technique is appropriate for the measurement of strain induced in nanostructure devices, because it has a higher spatial resolution than conventional Raman spectroscopy and can evaluate anisotropic stress states owing to the excitation of multiple optical phonon modes. Results indicate that quasi-uniaxial stress states exist in SiGe layers in unimplanted Si areas, which depends on the stripe-width ratio of implanted and unimplanted areas, and that quasi-uniaxial stress states are successfully induced in SiGe by the present technique, which can be considered as the channel materials of high-performance transistors.
ISSN:0021-4922
1347-4065