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P‐189: The Technological Study for Side Etch about ITO Stacked OC Layer on Touch Panel
The paper is mainly studied that side etch has the relation with ITO stacked OC layer on touch panel; And OC is served as insulating layer used between the electrode of Tx and Rx, the compactness of ITO film has the important influence on temperature and high humidity reliability evaluation. The res...
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Published in: | SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.1876-1879 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The paper is mainly studied that side etch has the relation with ITO stacked OC layer on touch panel; And OC is served as insulating layer used between the electrode of Tx and Rx, the compactness of ITO film has the important influence on temperature and high humidity reliability evaluation. The result is product reliability. The issue of side etch would be electrical disconnection, as to the product work not properly in high suggested that main factors of side etch were the choice of OC materials, and ITO sputtering technique, in addition to the thickness, but can't be improved thoroughly only from optimizing OC materials. Therefore, ITO process, sputtering temperature and depositing power, improved completely the issue of side etch on OC. |
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ISSN: | 0097-966X 2168-0159 |
DOI: | 10.1002/sdtp.12439 |