26‐2: Extremely High‐Efficient OLED Achieving External Quantum Efficiency over 40% by Carrier Injection Layer with Super‐Low Refractive Index

Extremely low‐refractive‐index hole‐injection and electron‐injection layers were developed to improve the outcoupling efficiency of an organic light‐emitting diode (OLED). These layers enabled a remarkably high external quantum efficiency of 41% in a bottom‐emission phosphorescent OLED and also impr...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.332-335
Main Authors: Watabe, Takeyoshi, Yamaoka, Ryohei, Ohsawa, Nobuharu, Tomida, Airi, Seo, Satoshi, Yamazaki, Shunpei
Format: Article
Language:English
Subjects:
Carrier injection
Current efficiency
Diodes
driving voltage
Efficiency
electron injection layer
Emission
hole injection layer
lifetime
low refractive index
OLED
Organic light emitting diodes
Phosphorescence
Quantum efficiency
Refractivity
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Summary:Extremely low‐refractive‐index hole‐injection and electron‐injection layers were developed to improve the outcoupling efficiency of an organic light‐emitting diode (OLED). These layers enabled a remarkably high external quantum efficiency of 41% in a bottom‐emission phosphorescent OLED and also improved the current efficiency even in a top‐emission OLED with a microcavity structure.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.12554