P‐75: Advanced Halftone Photolithography Using Four‐Mask Process Architecture for G8.6 TFT‐LCDs

Advanced four‐mask process a‐Si TFT array manufacturing method and good TFT stability is presented in this paper. We used an optimum half‐tone mask transmittance and half‐tone photoresist for the four‐mask process architecture. Data line open and photoresist peeling issues occurred in G8.6 TFT‐LCDs...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.1471-1474
Main Authors: Cho, An-Thung, Hsu, James, Zhou, Jeff, Hong, Jinn, Yang, Feng-yun, Luo, Yan-mei, Tian, Yi-qun, Lei, Dan, Liu, Zhen, Mo, Qiong-hua, Liu, Kai-jun, Ge, Bang-tong, Long, Feng-xiang, Fu, Ting-ting, Li, Min, Chen, Wade, Lu, York
Format: Article
Language:English
Subjects:
Acid value
Architecture
Data line open
Four-mask technology
Halftone Photolithography
Photolithography
Photoresist peeling
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Advanced four‐mask process a‐Si TFT array manufacturing method and good TFT stability is presented in this paper. We used an optimum half‐tone mask transmittance and half‐tone photoresist for the four‐mask process architecture. Data line open and photoresist peeling issues occurred in G8.6 TFT‐LCDs and solutions will be shown.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.12240