50‐3: Formation of Source and Drain Regions in Top‐Gate Self‐Aligned Oxide Semiconductor Field‐Effect Transistor

Formation of source and drain regions in a top‐gate self‐aligned field‐effect transistor and its mechanism were examined. A stack structure of silicon nitride and an oxide semiconductor (OS) is effective, and hydrogen trapped in oxygen vacancies in the OS and the presence of metallic indium at the i...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.660-663
Main Authors: Okazaki, Kenichi, Obonai, Toshimitsu, Shima, Yukinori, Yasumoto, Seiji, Koezuka, Junichi, Ishihara, Noritaka, Kurosawa, Yoichi, Yamazaki, Shunpei
Format: Article
Language:English
Subjects:
CAAC
formation method of S-D regions
OS FET
short channel length
Silicon nitride
TGSA
Transistors
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Summary:Formation of source and drain regions in a top‐gate self‐aligned field‐effect transistor and its mechanism were examined. A stack structure of silicon nitride and an oxide semiconductor (OS) is effective, and hydrogen trapped in oxygen vacancies in the OS and the presence of metallic indium at the interface are important.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.12333