IGZO‐TFT technology for large‐screen 8K display

We succeeded in G8 factory for mass production of Indium–Gallium–Zink–Oxide thin‐film transistor (IGZO‐TFT) for the first time in the world. The initial TFT process was an etching stop‐type TFT, but now, we are mass producing channel etching‐type TFTs. And, its application range is smartphones, tabl...

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Bibliographic Details
Published in:Journal of the Society for Information Display 2018-03, Vol.26 (3), p.169-177
Main Authors: Hara, Yoshihito, Kikuchi, Tetsuo, Kitagawa, Hideki, Morinaga, Junichi, Ohgami, Hiroyuki, Imai, Hajime, Daitoh, Tohru, Matsuo, Takuya
Format: Article
Language:English
Subjects:
120 Hz driving
Etching
Gallium
high resolution
IGZO
Indium gallium zinc oxide
large‐screen 8K
Low resistance
Mass production
Oxide TFT
single data‐line structure
Smartphones
Tablet computers
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Summary:We succeeded in G8 factory for mass production of Indium–Gallium–Zink–Oxide thin‐film transistor (IGZO‐TFT) for the first time in the world. The initial TFT process was an etching stop‐type TFT, but now, we are mass producing channel etching‐type TFTs. And, its application range is smartphones, tablets, PCs, monitors, TV, and so on. In particular, because of recent demands for high‐resolution and narrow frame, our IGZO display has been advanced in technology development with gate driver in panel. In this paper, we report development combining low resistance technology and the latest IGZO‐TFT (IGZO5) for large‐screen 8K display. We developed the fifth generation IGZO‐TFT. Its mobility was 15 cm2/Vs, and high reliability was confirmed. In addition, we developed a low resistance technology. We report the development combining low resistance technology and the latest IGZO‐TFT for large‐screen display of 8K 120 Hz with single data‐line structure.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.648