Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

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Bibliographic Details
Published in:Journal of electronic materials 1997-03, Vol.26 (3), p.266-271
Main Authors: Ping, A. T., Schmitz, A. C., Adesida, I., Khan, M. Asif, Chen, Q., Yang, J. W.
Format: Article
Language:English
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-997-0162-0