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Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

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Published in:Journal of electronic materials 1998-07, Vol.27 (7), p.858-865
Main Authors: SENGUPTA, D. K, WEISMAN, M. B, MALIN, J. I, CURTIS, A. P, HORTON, T, STILLMAN, G. E, GUNAPALA, S. D, BANDARA, S. V, POOL, F, LIU, J. K, MCKELVEY, M, LUONG, E, FENG, M, HONG, W, MUMOLO, J, LIU, H. C, WANG, W. I, CHUANG, S. L, CHANG, Y. C, COOPER, L, ADESIDA, I, BLOOM, I, HSIEH, K. C, FANG, W
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cited_by cdi_FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003
cites cdi_FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003
container_end_page 865
container_issue 7
container_start_page 858
container_title Journal of electronic materials
container_volume 27
creator SENGUPTA, D. K
WEISMAN, M. B
MALIN, J. I
CURTIS, A. P
HORTON, T
STILLMAN, G. E
GUNAPALA, S. D
BANDARA, S. V
POOL, F
LIU, J. K
MCKELVEY, M
LUONG, E
FENG, M
HONG, W
MUMOLO, J
LIU, H. C
WANG, W. I
CHUANG, S. L
CHANG, Y. C
COOPER, L
ADESIDA, I
BLOOM, I
HSIEH, K. C
FANG, W
description
doi_str_mv 10.1007/s11664-998-0110-7
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_204850225</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34064792</sourcerecordid><originalsourceid>FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003</originalsourceid><addsrcrecordid>eNo9kE9LwzAYxoMoOKcfwFsQr3HvmzZNexxDpzDw4A7eQpqmrKNruiRlzE9vy8TTc3n-8PwIeUR4QQC5CIhZlrKiyBkgApNXZIYiTRjm2fc1mUGSIRM8EbfkLoQ9AArMcUYOa-9OcUd1V1Gz016baH3zo2PjOupq2rF47i1d62VYLNtJ6HHQXRwO9GTbljZd7bW3Fe13LrrKRmui83QMT17mOvbV0DCUIXod7T25qXUb7MOfzsn27XW7emebz_XHarlhhhdFHF9wq6VBmRRoJReZSUVdyhJSqa3IdV6WpdEJAgdrTVWXJjMGaijyAnKAZE6eLrW9d8fBhqj2bvDduKg4pLkAzsVowovJeBeCt7XqfXPQ_qwQ1MRUXZiqkamamCo5Zp7_inUwuh2vd6YJ_0GejJShSH4BH7l3jg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>204850225</pqid></control><display><type>article</type><title>Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate</title><source>Springer Nature</source><creator>SENGUPTA, D. K ; WEISMAN, M. B ; MALIN, J. I ; CURTIS, A. P ; HORTON, T ; STILLMAN, G. E ; GUNAPALA, S. D ; BANDARA, S. V ; POOL, F ; LIU, J. K ; MCKELVEY, M ; LUONG, E ; FENG, M ; HONG, W ; MUMOLO, J ; LIU, H. C ; WANG, W. I ; CHUANG, S. L ; CHANG, Y. C ; COOPER, L ; ADESIDA, I ; BLOOM, I ; HSIEH, K. C ; FANG, W</creator><creatorcontrib>SENGUPTA, D. K ; WEISMAN, M. B ; MALIN, J. I ; CURTIS, A. P ; HORTON, T ; STILLMAN, G. E ; GUNAPALA, S. D ; BANDARA, S. V ; POOL, F ; LIU, J. K ; MCKELVEY, M ; LUONG, E ; FENG, M ; HONG, W ; MUMOLO, J ; LIU, H. C ; WANG, W. I ; CHUANG, S. L ; CHANG, Y. C ; COOPER, L ; ADESIDA, I ; BLOOM, I ; HSIEH, K. C ; FANG, W</creatorcontrib><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-998-0110-7</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of electronic materials, 1998-07, Vol.27 (7), p.858-865</ispartof><rights>1998 INIST-CNRS</rights><rights>Copyright Minerals, Metals &amp; Materials Society Jul 1998</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003</citedby><cites>FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=2336109$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SENGUPTA, D. K</creatorcontrib><creatorcontrib>WEISMAN, M. B</creatorcontrib><creatorcontrib>MALIN, J. I</creatorcontrib><creatorcontrib>CURTIS, A. P</creatorcontrib><creatorcontrib>HORTON, T</creatorcontrib><creatorcontrib>STILLMAN, G. E</creatorcontrib><creatorcontrib>GUNAPALA, S. D</creatorcontrib><creatorcontrib>BANDARA, S. V</creatorcontrib><creatorcontrib>POOL, F</creatorcontrib><creatorcontrib>LIU, J. K</creatorcontrib><creatorcontrib>MCKELVEY, M</creatorcontrib><creatorcontrib>LUONG, E</creatorcontrib><creatorcontrib>FENG, M</creatorcontrib><creatorcontrib>HONG, W</creatorcontrib><creatorcontrib>MUMOLO, J</creatorcontrib><creatorcontrib>LIU, H. C</creatorcontrib><creatorcontrib>WANG, W. I</creatorcontrib><creatorcontrib>CHUANG, S. L</creatorcontrib><creatorcontrib>CHANG, Y. C</creatorcontrib><creatorcontrib>COOPER, L</creatorcontrib><creatorcontrib>ADESIDA, I</creatorcontrib><creatorcontrib>BLOOM, I</creatorcontrib><creatorcontrib>HSIEH, K. C</creatorcontrib><creatorcontrib>FANG, W</creatorcontrib><title>Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate</title><title>Journal of electronic materials</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LwzAYxoMoOKcfwFsQr3HvmzZNexxDpzDw4A7eQpqmrKNruiRlzE9vy8TTc3n-8PwIeUR4QQC5CIhZlrKiyBkgApNXZIYiTRjm2fc1mUGSIRM8EbfkLoQ9AArMcUYOa-9OcUd1V1Gz016baH3zo2PjOupq2rF47i1d62VYLNtJ6HHQXRwO9GTbljZd7bW3Fe13LrrKRmui83QMT17mOvbV0DCUIXod7T25qXUb7MOfzsn27XW7emebz_XHarlhhhdFHF9wq6VBmRRoJReZSUVdyhJSqa3IdV6WpdEJAgdrTVWXJjMGaijyAnKAZE6eLrW9d8fBhqj2bvDduKg4pLkAzsVowovJeBeCt7XqfXPQ_qwQ1MRUXZiqkamamCo5Zp7_inUwuh2vd6YJ_0GejJShSH4BH7l3jg</recordid><startdate>19980701</startdate><enddate>19980701</enddate><creator>SENGUPTA, D. K</creator><creator>WEISMAN, M. B</creator><creator>MALIN, J. I</creator><creator>CURTIS, A. P</creator><creator>HORTON, T</creator><creator>STILLMAN, G. E</creator><creator>GUNAPALA, S. D</creator><creator>BANDARA, S. V</creator><creator>POOL, F</creator><creator>LIU, J. K</creator><creator>MCKELVEY, M</creator><creator>LUONG, E</creator><creator>FENG, M</creator><creator>HONG, W</creator><creator>MUMOLO, J</creator><creator>LIU, H. C</creator><creator>WANG, W. I</creator><creator>CHUANG, S. L</creator><creator>CHANG, Y. C</creator><creator>COOPER, L</creator><creator>ADESIDA, I</creator><creator>BLOOM, I</creator><creator>HSIEH, K. C</creator><creator>FANG, W</creator><general>Institute of Electrical and Electronics Engineers</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>19980701</creationdate><title>Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate</title><author>SENGUPTA, D. K ; WEISMAN, M. B ; MALIN, J. I ; CURTIS, A. P ; HORTON, T ; STILLMAN, G. E ; GUNAPALA, S. D ; BANDARA, S. V ; POOL, F ; LIU, J. K ; MCKELVEY, M ; LUONG, E ; FENG, M ; HONG, W ; MUMOLO, J ; LIU, H. C ; WANG, W. I ; CHUANG, S. L ; CHANG, Y. C ; COOPER, L ; ADESIDA, I ; BLOOM, I ; HSIEH, K. C ; FANG, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SENGUPTA, D. K</creatorcontrib><creatorcontrib>WEISMAN, M. B</creatorcontrib><creatorcontrib>MALIN, J. I</creatorcontrib><creatorcontrib>CURTIS, A. P</creatorcontrib><creatorcontrib>HORTON, T</creatorcontrib><creatorcontrib>STILLMAN, G. E</creatorcontrib><creatorcontrib>GUNAPALA, S. D</creatorcontrib><creatorcontrib>BANDARA, S. V</creatorcontrib><creatorcontrib>POOL, F</creatorcontrib><creatorcontrib>LIU, J. K</creatorcontrib><creatorcontrib>MCKELVEY, M</creatorcontrib><creatorcontrib>LUONG, E</creatorcontrib><creatorcontrib>FENG, M</creatorcontrib><creatorcontrib>HONG, W</creatorcontrib><creatorcontrib>MUMOLO, J</creatorcontrib><creatorcontrib>LIU, H. C</creatorcontrib><creatorcontrib>WANG, W. I</creatorcontrib><creatorcontrib>CHUANG, S. L</creatorcontrib><creatorcontrib>CHANG, Y. C</creatorcontrib><creatorcontrib>COOPER, L</creatorcontrib><creatorcontrib>ADESIDA, I</creatorcontrib><creatorcontrib>BLOOM, I</creatorcontrib><creatorcontrib>HSIEH, K. C</creatorcontrib><creatorcontrib>FANG, W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest research library</collection><collection>ProQuest Science Journals</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>Materials science collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SENGUPTA, D. K</au><au>WEISMAN, M. B</au><au>MALIN, J. I</au><au>CURTIS, A. P</au><au>HORTON, T</au><au>STILLMAN, G. E</au><au>GUNAPALA, S. D</au><au>BANDARA, S. V</au><au>POOL, F</au><au>LIU, J. K</au><au>MCKELVEY, M</au><au>LUONG, E</au><au>FENG, M</au><au>HONG, W</au><au>MUMOLO, J</au><au>LIU, H. C</au><au>WANG, W. I</au><au>CHUANG, S. L</au><au>CHANG, Y. C</au><au>COOPER, L</au><au>ADESIDA, I</au><au>BLOOM, I</au><au>HSIEH, K. C</au><au>FANG, W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate</atitle><jtitle>Journal of electronic materials</jtitle><date>1998-07-01</date><risdate>1998</risdate><volume>27</volume><issue>7</issue><spage>858</spage><epage>865</epage><pages>858-865</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-998-0110-7</doi><tpages>8</tpages></addata></record>
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ispartof Journal of electronic materials, 1998-07, Vol.27 (7), p.858-865
issn 0361-5235
1543-186X
language eng
recordid cdi_proquest_journals_204850225
source Springer Nature
subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T23%3A42%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20and%20characterization%20of%20n-type%20GaAs/AlGaAs%20quantum%20well%20infrared%20photodetector%20on%20GaAs-on-Si%20substrate&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=SENGUPTA,%20D.%20K&rft.date=1998-07-01&rft.volume=27&rft.issue=7&rft.spage=858&rft.epage=865&rft.pages=858-865&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/s11664-998-0110-7&rft_dat=%3Cproquest_cross%3E34064792%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c299t-992ea7c17391e7256c45fb7b047ae58a8bbbca31020eecdfbc6cc0f098908003%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=204850225&rft_id=info:pmid/&rfr_iscdi=true