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Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs

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Bibliographic Details
Published in:	Journal of electronic materials 1997-11, Vol.26 (11), p.1342-1348
Main Authors:	Goldman, R. S., Feenstra, R. M., Briner, B. G., O’Steen, M. L., Hauenstein, R. J.
Format:	Article
Language:	English
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Online Access:	Get full text
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