Redox agent enhanced chemical mechanical polishing of thin film diamond

The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to an alkaline SF1 polishing slurry. Three oxidizing agents, namely hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thios...

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Bibliographic Details
Published in:Carbon (New York) 2018-04, Vol.130, p.25-30
Main Authors: Mandal, Soumen, Thomas, Evan L.H., Gines, Laia, Morgan, David, Green, Joshua, Brousseau, Emmanuel B., Williams, Oliver A.
Format: Article
Language:English
Subjects:
Chemical mechanical polishing
Diamond
Diamond films
Diamond polishing
Diamonds
Ferric nitrate
Hydrogen peroxide
Mechanical polishing
Organic chemistry
Oxalic acid
Oxidation
Oxidizing agents
Oxygen content
Potassium permanganate
Reagents
Reducing agents
Slurries
Sodium thiosulfate
Spectrum analysis
Thin films
Thiosulfates
X ray photoelectron spectroscopy
X-rays
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Summary:The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to an alkaline SF1 polishing slurry. Three oxidizing agents, namely hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on thesamples polished using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerate the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2017.12.077