Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching

Phase-change memory (PCM) compact modeling of the threshold switching based on a thermal runaway in Poole-Frenkel conduction is proposed. Although this approach is often used in physical models, this is the first time it is implemented in a compact model. The model accuracy is validated by a good co...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Main Authors: Pigot, Corentin, Gilibert, Fabien, Reyboz, Marina, Bocquet, Marc, Zuliani, Paola, Portal, Jean-Michel
Format: Article
Language:English
Subjects:
Computer memory
Computer simulation
Engineering Sciences
Micro and nanotechnologies
Microelectronics
Model accuracy
Phase change
Phase transitions
Simulators
Switching
Thermal runaway
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Summary:Phase-change memory (PCM) compact modeling of the threshold switching based on a thermal runaway in Poole-Frenkel conduction is proposed. Although this approach is often used in physical models, this is the first time it is implemented in a compact model. The model accuracy is validated by a good correlation between simulations and experimental data collected on a PCM cell embedded in a 90 nm technology. A wide range of intermediate states is measured and accurately modeled with a single set of parameters, allowing multilevel programing. A good convergence is exhibited even in snapback simulation owing to this fully continuous approach. Moreover, threshold properties extraction indicates a thermally enhanced switching, which validates the basic hypothesis of the model. Finally, it is shown that this model is compliant with a new drift-resilient cell-state metric. Once enriched with a phase transition module, this compact model is ready to be implemented in circuit simulators.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FE13