Improved Schottky Contacts on n-Type 4H-SiC Using ZrB^sub 2^ Deposited at High Temperatures

We report on improved electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20 degrees Celsius and 800 degrees Celsius. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperat...

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Bibliographic Details
Published in:Journal of electronic materials 2007-07, Vol.36 (7), p.805
Main Authors: Oder, T N, Martin, P, Adedeji, A V, Isaacs-Smith, T, Williams, J R
Format: Article
Language:English
Subjects:
High temperature
Scattering
Silicon carbide
Zirconium
Online Access:Get full text
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Summary:We report on improved electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20 degrees Celsius and 800 degrees Celsius. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperature, from 0.87 eV for contacts deposited at 20 degrees Celsius to 1.07 eV for those deposited at 600 degrees Celsius. The Rutherford backscattering spectroscopy (RBS) spectra of these contacts revealed a decrease in oxygen peak with an increase in the deposition temperature and showed no reaction at the ZrB2/SiC interface. These results indicate improved electrical and thermal properties of ZrB2/SiC Schottky contacts, making them attractive for high-temperature applications.
ISSN:0361-5235
1543-186X