Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

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Bibliographic Details
Published in:Journal of electronic materials 1998-04, Vol.27 (4), p.222-228
Main Authors: Yablonskii, G. P., Gurskii, A. L., Lutsenko, E. V., Marko, I. P., Schineller, B., Guttzeit, A., Schön, O., Heuken, M., Heime, K., Beccard, R., Schmitz, D., Juergensen, H.
Format: Article
Language:English
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-998-0391-x