Doping of 3C-SiC by implantation of nitrogen at high temperatures

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Bibliographic Details
Published in:Journal of electronic materials 1997-03, Vol.26 (3), p.123-127
Main Authors: Lossy, R., Reichert, W., Obermeier, E., Skorupa, W.
Format: Article
Language:English
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-997-0137-1