Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions

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Bibliographic Details
Published in:Journal of electronic materials 1998-12, Vol.27 (12), p.1296
Main Authors: Downey, Daniel F, Marcus, Steven D, Chow, Judy W
Format: Article
Language:English
Online Access:Get full text
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-998-0089-0