Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

This paper reports the fabrication and characterization of GaInAsSb photodetectors operating at 2 μm. At room temperature, the performance of these photodiodes under reverse bias conditions is limited by the surface leakage. A model has been developed to separate the bulk (diffusion and generation-r...

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Bibliographic Details
Published in:Journal of electronic materials 2006-08, Vol.35 (8), p.1613-1617
Main Authors: Bhagwat, Vinay, Xiao, Yegao, Bhat, Ishwara, Dutta, Partha, Refaat, Tamer F., Abedin, M. Nurul, Kumar, Vikram
Format: Article
Language:English
Subjects:
Diffusion
Electric currents
Leakage
Light emitting diodes
Sensors
Wave division multiplexing
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Summary:This paper reports the fabrication and characterization of GaInAsSb photodetectors operating at 2 μm. At room temperature, the performance of these photodiodes under reverse bias conditions is limited by the surface leakage. A model has been developed to separate the bulk (diffusion and generation-recombination (g-r)) and the surface leakage contributions toward the total leakage current. By fitting this model to the experimental data, values of material parameters such as minority carrier diffusion length and lifetime have been estimated. The highest R^sub 0^A of 55 Ω-cm^sup 2^ has been obtained with a responsivity of 0.44 A/W at 2 μm. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0206-x