Ohmic contacts to n-type GaSb and n-type GaInAsSb

• Published in: Journal of electronic materials 2004-11, Vol.33 (11), p.1406-1410
• Main Authors: HUANG, Robin K, WANG, Christine A, HARRIS, Christopher T, CONNORS, Michael K, SHIAU, Daniel A
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Contact resistance, contact potential; Electric resistance; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Metals; Physics
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-004-0171-1

An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples were fabricated into mesa-etched, transfer-length method (TLM) structures, and the specific-contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific-contact resistivities of about 2 × 10^sup -6^ ohm-cm^sup 2^ and sheet resistances of about 4 ohm/[white square] are found for n-type GaInAsSb doped at about 3 × 10^sup 18^ cm^sup -3^. [PUBLICATION ABSTRACT] Key words: GaSb, GaInAsSb, TLM, ohmic contacts