Line broadening analysis using integral breadth methods: a critical review

Integral breadth methods for line profile analysis are reviewed, including modifications of the Williamson–Hall method recently proposed for the specific case of dislocation strain broadening. Two cases of study, supported by the results of a TEM investigation, are considered in detail: nanocrystall...

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Bibliographic Details
Published in:Journal of applied crystallography 2004-06, Vol.37 (3), p.381-390
Main Authors: Scardi, P., Leoni, M., Delhez, R.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Exact sciences and technology
integral breadth
line profile analysis
Linear defects: dislocations, disclinations
Machining, milling
Materials science
Materials synthesis
materials processing
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Physics
powder diffraction
size-strain analysis
Structure of solids and liquids
crystallography
Williamson-Hall method
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Summary:Integral breadth methods for line profile analysis are reviewed, including modifications of the Williamson–Hall method recently proposed for the specific case of dislocation strain broadening. Two cases of study, supported by the results of a TEM investigation, are considered in detail: nanocrystalline ceria crystallized from amorphous precursors and highly deformed nickel powder produced by extensive ball milling. A further application concerns a series of Fe–Mo powder specimens that were ball milled for increasing time. Traditional and modified Williamson–Hall methods confirm their merits for a rapid overview of the line broadening effects and possible understanding of the main causes. However, quantitative results are generally not reliable. Limits in the applicability of integral breadth methods and reliability of the results are discussed in detail.
ISSN:1600-5767
0021-8898
1600-5767
DOI:10.1107/S0021889804004583