Radiation induced deuterium absorption dependence on irradiation temperature, dose rate, and gas pressure for SiC

•Importance of irradiation temperature, dose rate, dose, and gas pressure for deuterium absorption in reaction bonded SiC examined.•Absorption depends linearly on total ionizing dose, but not on dose rate.•SIMS results for high temperature deuterium loading consistent with radiation enhanced diffusi...

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Bibliographic Details
Published in:Fusion engineering and design 2017-11, Vol.124, p.1127-1130
Main Authors: Hodgson, E.R., Moroño, A., Malo, M., Verdú, M., Sánchez, F.J.
Format: Article
Language:English
Subjects:
Absorption
Adsorption
Desorption
Deuterium
Diffusion
Enhanced diffusion
Fluxes
Gas pressure
Inserts
Ionization
Ionizing radiation
Nuclear power plants
Nuclear reactors
Radiation
Radiation damage
Radiation dosage
Radiation effects
SiC
Temperature dependence
Tritium
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Summary:•Importance of irradiation temperature, dose rate, dose, and gas pressure for deuterium absorption in reaction bonded SiC examined.•Absorption depends linearly on total ionizing dose, but not on dose rate.•SIMS results for high temperature deuterium loading consistent with radiation enhanced diffusion.•TSD measurements not sufficient to determine amount of deuterium absorbed, but only indicate near surface concentration. During ITER and DEMO reactor operation Li-Pb blanket flow channel inserts made of SiC will be exposed to both radiation and tritium. Absorption, desorption, and tritium diffusion are expected to occur and will strongly depend on the irradiation conditions; temperature, and neutron and gamma fluxes. Previous results showed that marked deuterium absorption, associated with silicon deuterium bonding, occurs for SiC materials when subjected to a radiation field, and that this radiation enhanced absorption strongly depends on the ionizing radiation and also on displacement damage. Here the roles played by irradiation temperature, dose rate, dose, and deuterium gas pressure are addressed for reaction bonded SiC. The results show that radiation induced deuterium absorption depends linearly on total ionizing dose and deuterium gas pressure, but not on dose rate. Behaviour with irradiation temperature is more complex, and clear changes in the deuterium thermal desorption are observed to occur depending on irradiation temperature. SIMS results for high temperature loaded RB SiC are consistent with radiation enhanced diffusion.
ISSN:0920-3796
1873-7196
DOI:10.1016/j.fusengdes.2017.02.081