Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

The gate leakage mechanism for InAlGaN/GaN high electron mobility transistors (HEMTs) is systematically studied using temperature‐dependent gate current–voltage characteristics. The electric field across the barrier layer is calculated through the extracted polarization charge and dielectric constan...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-06, Vol.215 (11), p.n/a
Main Authors: Lumbantoruan, Franky, Wu, Chia‐Hsun, Zheng, Xia‐Xi, Singh, Sankalp K., Dee, Chang‐Fu, Majlis, Burhanuddin Y., Chang, Edward‐Yi
Format: Article
Language:English
Subjects:
Barrier layers
Current leakage
Electric contacts
Electric fields
Electron mobility
Emission analysis
Gates
High electron mobility transistors
InAlGaN
Leakage current
leakage current mechanism
Semiconductor devices
Temperature dependence
Threshold voltage
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Summary:The gate leakage mechanism for InAlGaN/GaN high electron mobility transistors (HEMTs) is systematically studied using temperature‐dependent gate current–voltage characteristics. The electric field across the barrier layer is calculated through the extracted polarization charge and dielectric constant of the InAlGaN/GaN HEMT. The gate current of the InAlGaN/GaN HEMT is analyzed by fitting the experimental data using Themionic Emission (TE), Poole–Frenkel (PF), and Fowler–Nordheim (FN) tunneling. The results show that 1) reverse leakage current in the thin InAlGaN barrier layer is dominated by FN tunneling due to triangular barrier formation; 2) for thicker barrier layer, the reverse leakage current at low electric field (
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700741