Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition

We investigate the effect of strain state on ultrathin AlN/GaN superlattice (SL) growth by metalorganic chemical vapor deposition. It is found that the strain state (tensile or compressive) plays a role in periodic structure formation. A well-ordered SL growth with excellent periodicity can be reali...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-01, Vol.57 (1), p.10306
Main Authors: Shen, Xu-Qiang, Takahashi, Tokio, Ide, Toshihide, Shimizu, Mitsuaki
Format: Article
Language:English
Subjects:
Aluminum nitride
Chemical vapor deposition
Compressive properties
Gallium nitrides
Metalorganic chemical vapor deposition
Organic chemistry
Periodic structures
Periodic variations
Silicon substrates
Superlattices
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Summary:We investigate the effect of strain state on ultrathin AlN/GaN superlattice (SL) growth by metalorganic chemical vapor deposition. It is found that the strain state (tensile or compressive) plays a role in periodic structure formation. A well-ordered SL growth with excellent periodicity can be realized under a tensile strain. However, a disordered SL structure is formed under a compressive strain. Furthermore, the ordered SL growth can be restored by inverting the strain state. Our findings show the importance of strain engineering in nanoscale structure growth.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.010306