Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO 2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2018-06, Vol.65 (6), p.1227-1238
Main Authors: Liang, C. D., Ma, R., Su, Y., O'Hara, A., Zhang, E. X., Alles, M. L., Wang, P., Zhao, S. E., Pantelides, S. T., Koester, S. J., Schrimpf, R. D., Fleetwood, D. M.
Format: Article
Language:English
Subjects:
Annealing
Black phosphorus (BP)
Delays
Density functional theory
Dielectrics
Energy
Energy distribution
Hafnium oxide
Irradiation
low-frequency noise
moisture effects
MOSFETs
Noise
Phosphorus
Post-irradiation
Radiation
Radiation effects
Real-time systems
Routing
Routing protocols
switched-bias annealing
Threshold voltage
total ionizing dose (TID)
Vacuum
Vehicular ad hoc networks
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO 2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ~0.2 and ~0.5 eV. Larger defect-related peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO 2 and H+ transport and reactions near the BP/HfO 2 interface in the observed radiation response and low-frequency noise.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2018.2828080